Skip to main content

Research Repository

Advanced Search

In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

Temperton, Robert; Gibson, Andrew; O'Shea, James


Robert Temperton

Andrew Gibson

Profile Image

Associate Professor and Reader in Physics


Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. This process, carried out using realistic temperatures and pressures (1 mbar, 450 K), was monitored in-situ using high-pressure X-ray photoelectron spectroscopy. This provides insight into the surface chemistry at the interface between the two oxide layers - specifically the reduction of titanium atoms from Ti4+ to Ti3+ upon dosing of trimethylaluminium. These defect states become locked into the heterojunction's interface, with implications to its electronic structure, and can act as an indicator as to when complete coverage of the rutile substrate is achieved.


Temperton, R., Gibson, A., & O'Shea, J. (2018). In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide. Physical Chemistry Chemical Physics, 21(3), 1393-1398.

Journal Article Type Article
Acceptance Date Dec 19, 2018
Online Publication Date Dec 19, 2018
Publication Date Dec 19, 2018
Deposit Date Dec 19, 2018
Publicly Available Date Dec 20, 2019
Journal Physical Chemistry Chemical Physics
Print ISSN 1463-9076
Electronic ISSN 1463-9084
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 21
Issue 3
Pages 1393-1398
Keywords Physical and Theoretical Chemistry; General Physics and Astronomy
Public URL
Publisher URL!divAbstract


You might also like

Downloadable Citations