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In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

Temperton, Robert; Gibson, Andrew; O'Shea, James

Authors

Robert Temperton

Andrew Gibson

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JAMES O'SHEA J.OSHEA@NOTTINGHAM.AC.UK
Associate Professor and Reader Inphysics



Abstract

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. This process, carried out using realistic temperatures and pressures (1 mbar, 450 K), was monitored in-situ using high-pressure X-ray photoelectron spectroscopy. This provides insight into the surface chemistry at the interface between the two oxide layers - specifically the reduction of titanium atoms from Ti4+ to Ti3+ upon dosing of trimethylaluminium. These defect states become locked into the heterojunction's interface, with implications to its electronic structure, and can act as an indicator as to when complete coverage of the rutile substrate is achieved.

Journal Article Type Article
Publication Date Dec 19, 2018
Journal Physical Chemistry Chemical Physics
Print ISSN 1463-9076
Electronic ISSN 1463-9084
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 21
Issue 3
Pages 1393-1398
APA6 Citation Temperton, R., Gibson, A., & O'Shea, J. (2018). In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide. Physical Chemistry Chemical Physics, 21(3), 1393-1398. https://doi.org/10.1039/c8cp06912c
DOI https://doi.org/10.1039/c8cp06912c
Keywords Physical and Theoretical Chemistry; General Physics and Astronomy
Publisher URL https://pubs.rsc.org/en/Content/ArticleLanding/2018/CP/C8CP06912C#!divAbstract

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