In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

Temperton, Robert; Gibson, Andrew; O'Shea, James

Abstract

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. This process, carried out using realistic temperatures and pressures (1 mbar, 450 K), was monitored in-situ using high-pressure X-ray photoelectron spectroscopy. This provides insight into the surface chemistry at the interface between the two oxide layers - specifically the reduction of titanium atoms from Ti4+ to Ti3+ upon dosing of trimethylaluminium. These defect states become locked into the heterojunction's interface, with implications to its electronic structure, and can act as an indicator as to when complete coverage of the rutile substrate is achieved.

Citation

Temperton, R., Gibson, A., & O'Shea, J. (2018). In-situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide. Physical Chemistry Chemical Physics, 21(3), 1393-1398. https://doi.org/10.1039/c8cp06912c

• Journal Article Type: Article
• Acceptance Date: Dec 19, 2018
• Online Publication Date: Dec 19, 2018
• Publication Date: Dec 19, 2018
• Deposit Date: Dec 19, 2018
• Publicly Available Date: Dec 20, 2019
• Journal: Physical Chemistry Chemical Physics
• Print ISSN: 1463-9076
• Electronic ISSN: 1463-9084
• Publisher: Royal Society of Chemistry
• Peer Reviewed: Peer Reviewed
• Volume: 21
• Issue: 3
• Pages: 1393-1398
• DOI: https://doi.org/10.1039/c8cp06912c
• Keywords: Physical and Theoretical Chemistry; General Physics and Astronomy
• Public URL: https://nottingham-repository.worktribe.com/output/1426530
• Publisher URL: https://pubs.rsc.org/en/Content/ArticleLanding/2018/CP/C8CP06912C#!divAbstract