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An antidamping spin–orbit torque originating from the Berry curvature (2014)
Journal Article
Kurebayashi, H., Sinova, J., Fang, D., Irvine, A. C., Skinner, T. D., Wunderlich, J., …Jungwirth, T. (2014). An antidamping spin–orbit torque originating from the Berry curvature. Nature Nanotechnology, 9(3), 211-217. https://doi.org/10.1038/nnano.2014.15

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching b... Read More about An antidamping spin–orbit torque originating from the Berry curvature.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.