T.Q.P. Vuong
Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
Vuong, T.Q.P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C.J.; Cho, Y.; Cheng, T.S.; Albar, J.D.; Eaves, Laurence; Foxon, C.T.; Beton, Peter H.; Novikov, Sergei V.; Gil, B.
Authors
G. Cassabois
P. Valvin
E. Rousseau
A. Summerfield
CHRISTOPHER MELLOR chris.mellor@nottingham.ac.uk
Associate Professor and Reader in Physics
Y. Cho
TIN CHENG Tin.Cheng@nottingham.ac.uk
Research Fellow
J.D. Albar
Laurence Eaves
C.T. Foxon
PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics
SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
B. Gil
Citation
Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., …Gil, B. (2017). Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4(2), Article 021023. https://doi.org/10.1088/2053-1583/aa604a
Journal Article Type | Article |
---|---|
Acceptance Date | Feb 10, 2017 |
Online Publication Date | Mar 17, 2017 |
Publication Date | Mar 17, 2017 |
Deposit Date | Apr 7, 2017 |
Publicly Available Date | Apr 7, 2017 |
Journal | 2D Materials |
Electronic ISSN | 2053-1583 |
Publisher | IOP Publishing |
Peer Reviewed | Peer Reviewed |
Volume | 4 |
Issue | 2 |
Article Number | 021023 |
DOI | https://doi.org/10.1088/2053-1583/aa604a |
Keywords | boron nitride, molecular beam epitaxy, deep ultraviolet |
Public URL | https://nottingham-repository.worktribe.com/output/850832 |
Publisher URL | http://iopscience.iop.org/article/10.1088/2053-1583/aa604a/meta;jsessionid=6F6C9A708463CD7291EC35FABB54FA9E.c2.iopscience.cld.iop.org |
Contract Date | Apr 7, 2017 |
Files
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
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