Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy
(2022)
Journal Article
Oussalah, S., Filali, W., Garoudja, E., Zatout, B., Lekoui, F., Amrani, R., Sengouga, N., & Henini, M. (2022). Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics Journal, 122, Article 105409. https://doi.org/10.1016/j.mejo.2022.105409
The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has been investigated for various temperatures ranging from 260 to 400 K. By... Read More about Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.