Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates

de Souza, Daniele; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Kazakov, Igor P.; Klekovkin, Alex Vladimirovich; Zinov'ev, Sergey A.; Likhachev, Igor; Pashaev, Elkhan; Souto, Sergio; Galvao Gobato, Y.; Galeti, Helder V.A.; Henini, Mohamed

Abstract

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction, micro-Raman at room temperature, and photoluminescence (PL) measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. X-ray diffraction results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties.

Citation

de Souza, D., Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Kazakov, I. P., …Henini, M. (2021). Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates. Semiconductor Science and Technology, 36(7), Article 075018. https://doi.org/10.1088/1361-6641/abf3d1

• Journal Article Type: Article
• Acceptance Date: Mar 31, 2021
• Online Publication Date: Jun 16, 2021
• Publication Date: 2021-07
• Deposit Date: Jun 16, 2021
• Publicly Available Date: Jun 17, 2022
• Journal: Semiconductor Science and Technology
• Print ISSN: 0268-1242
• Electronic ISSN: 1361-6641
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 36
• Issue: 7
• Article Number: 075018
• DOI: https://doi.org/10.1088/1361-6641/abf3d1
• Public URL: https://nottingham-repository.worktribe.com/output/5687486
• Publisher URL: https://iopscience.iop.org/article/10.1088/1361-6641/abf3d1
• Additional Information: This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://iopscience.iop.org/article/10.1088/1361-6641/abf3d1