Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
(2017)
Journal Article
Novikov, S. V., & Foxon, C. (2017). Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477, 154-158. https://doi.org/10.1016/j.jcrysgro.2017.01.007
Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron... Read More about Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources.