All Outputs (3)

1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application (2023)
Conference Proceeding
De Giorgio, M., Li, K., Marchant, S., de Lillo, L., Empringham, L., Serafianos, D., …Johnson, M. (2023). 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application. In 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP). https://doi.org/10.1109/spec56436.2023.10408710

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB... Read More about 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application.

IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle (2023)
Conference Proceeding
Li, K., & Vo-Duy, T. (2023). IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle. In 2023 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/vppc60535.2023.10403256

Motor Vehicle Challenge, supported by IEEE Vehicular Technology Society, is an annual activity to find an appropriate energy management strategy to improve electric vehicles’ performance. In Challenge 2024, power losses and efficiency of power conver... Read More about IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle.

N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems (2023)
Conference Proceeding
Eckstein, M., & Li, K. (2023). N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems. In 2022 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/VPPC55846.2022.10003315

Accurate and fast power loss estimation models based on a good understanding of the occuring loss mechanisms are crucial to achieve high efficiency, high power density and to take full advantage of the superior characteristics of Gallium Nitride (GaN... Read More about N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems.