Layered Al2O3-SiO2 and Al2O3-Ta2O5 thin-film composites for high dielectric strength, deposited by pulsed direct current and radio frequency magnetron sputtering
(2019)
Journal Article
Hanby, B. V., Stuart, B. W., Gimeno-Fabra, M., Moffat, J., Gerada, C., & Grant, D. M. (2019). Layered Al2O3-SiO2 and Al2O3-Ta2O5 thin-film composites for high dielectric strength, deposited by pulsed direct current and radio frequency magnetron sputtering. Applied Surface Science, 492, 328-336. https://doi.org/10.1016/j.apsusc.2019.06.202
Multilayer thin films have the potential to act as high dielectric strength insulation for wire and microelectronics. In this study, films consisting of 2, 4 or 8 layers, composed of Al2O3 with SiO2 or Ta2O5, were prepared via pulsed direct current a... Read More about Layered Al2O3-SiO2 and Al2O3-Ta2O5 thin-film composites for high dielectric strength, deposited by pulsed direct current and radio frequency magnetron sputtering.