Highly-mismatched InAs/InSe heterojunction diodes
(2016)
Journal Article
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component... Read More about Highly-mismatched InAs/InSe heterojunction diodes.