All Outputs (7)

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article
Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., …Wang, K. (2021). Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Advanced Materials, 33(51), Article 2104658. https://doi.org/10.1002/adma.202104658

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., …Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z. R., Balakrishnan, N., Makarovskiy, O., …Patanè, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), Article 045020. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article
Yang, Z., Wang, X., Felton, J., Kudrynskyi, Z., Gen, M., Nomura, T., …Patanè, A. (2021). Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T. Physical Review B (Condensed Matter), 104(8), Article 085206. https://doi.org/10.1103/PhysRevB.104.085206

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods (2021)
Journal Article
Kudrynskyi, Z. R., Mintyanskii, I. V., Savitskii, P. I., & Kovalyuk, Z. D. (2021). Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods. Applied Sciences, 11(11), Article 5181. https://doi.org/10.3390/app11115181

Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles... Read More about Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods.

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals (2021)
Journal Article
Osiekowicz, M., Staszczuk, D., Olkowska-Pucko, K., Kipczak, Ł., Grzeszczyk, M., Zinkiewicz, M., …Molas, M. R. (2021). Resonance and antiresonance in Raman scattering in GaSe and InSe crystals. Scientific Reports, 11(1), Article 924. https://doi.org/10.1038/s41598-020-79411-x

The temperature effect on the Raman scattering efficiency is investigated in ε-GaSe and γ-InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance be... Read More about Resonance and antiresonance in Raman scattering in GaSe and InSe crystals.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy (2021)
Journal Article
Buckley, D., Kudrynskyi, Z. R., Balakrishnan, N., Vincent, T., Mazumder, D., Castanon, E., …Patanè, A. (2021). Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced Functional Materials, 31(11), Article 2008967. https://doi.org/10.1002/adfm.202008967

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.