Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions
(2017)
Journal Article
Ahmed, M. R., Todd, R., & Forsyth, A. J. (2017). Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions. IEEE Transactions on Industrial Electronics, 64(11), 9001-9011. https://doi.org/10.1109/tie.2017.2721882
Circuit-level analytical models for hard-switching, soft-switching, and dv/dt-induced false turn on of SiC MOSFETs and their experimental validation are described. The models include the high-frequency parasitic components in the circuit and enable f... Read More about Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions.