Terahertz electrical writing speed in an antiferromagnetic memory

Olejn�k, Kamil; Seifert, Tom; Ka�par, Zden?k; Nov�k, V�t; Wadley, Peter; Campion, Richard P.; Baumgartner, Manuel; Gambardella, Pietro; N?mec, Petr; Wunderlich, Joerg; Sinova, Jairo; Ku�el, Petr; M�ller, Melanie; Kampfrath, Tobias; Jungwirth, Tomas

doi:10.1126/sciadv.aar3566

All Outputs (2)

Spin switching in antiferromagnets using Néel-order spin-orbit torques (2018)
Journal Article
Wadley, P., & Edmonds, K. (2018). Spin switching in antiferromagnets using Néel-order spin-orbit torques. Chinese Physics B, 27(10), Article 107201. https://doi.org/10.1088/1674-1056/27/10/107201

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environmen... Read More about Spin switching in antiferromagnets using Néel-order spin-orbit torques.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.