Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well

Herval, L.K S.; Galeti, H.V.A.; Orsi Gordo, V.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.

doi:10.1109/SBMicro.2014.6940126

All Outputs (3)

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias (2014)
Journal Article
Bansal, K., Henini, M., Alshammari, M. S., & Datta, S. (2014). Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105(12), Article 123503. https://doi.org/10.1063/1.4896541

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced... Read More about Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias.

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration (2014)
Journal Article
Steele, J., Lewis, R., Henini, M., Lemine, O., Fan, D., Mazur, Y., …Salamo, G. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express, 22(10), https://doi.org/10.1364/OE.22.011680

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due... Read More about Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration.

Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well (2014)
Presentation / Conference Contribution
Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (2014). Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). https://doi.org/10.1109/SBMicro.2014.6940126

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. T... Read More about Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well.