All Outputs (3)

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Presentation / Conference Contribution
DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., Boroyevich, D., & Burgos, R. (2018, June). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. Presented at PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors (2018)
Journal Article
O Brien, J., Yang, L., Li, K., Dai, J., Corfield, M., Harris, A., Paciura, K., O'Brien, J., & Johnson, C. M. (2018). Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors. IEEE Transactions on Power Electronics, 33(12), 10594-10601. https://doi.org/10.1109/TPEL.2018.2809923

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MO... Read More about Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2018)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, 8(1), 3-11. https://doi.org/10.1049/iet-est.2017.0022

(This study is for special section ‘Design, modelling and control of electric drives for transportation applications’) The conduction and switching losses of silicon carbide (SIC) and gallium nitride (GaN) power transistors are compared in this study... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.