All Outputs (12)

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (2024). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics, 39(9), 11625-11636. https://doi.org/10.1109/tpel.2024.3405320

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage ( Vth ) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (in press). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics,

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage (Vth) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the im... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle (2023)
Journal Article
Li, K., & Sen, S. (2024). A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle. IEEE Transactions on Vehicular Technology, 73(4), 4541-4553. https://doi.org/10.1109/tvt.2023.3340297

In order to overcome the challenge of balancing accuracy with simulation speed of power electronics converters for system-level simulation, the paper proposes a GaN power transistor model that can accurately and rapidly predict power losses, which is... Read More about A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle.

IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle (2023)
Presentation / Conference Contribution
Li, K., & Vo-Duy, T. (2023). IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle. In 2023 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/vppc60535.2023.10403256

Motor Vehicle Challenge, supported by IEEE Vehicular Technology Society, is an annual activity to find an appropriate energy management strategy to improve electric vehicles’ performance. In Challenge 2024, power losses and efficiency of power conver... Read More about IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Presentation / Conference Contribution
Almpanis, I., Evans, P., Li, K., & Lophitis, N. (2023, September). Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances. Presented at 2023 IEEE Design Methodologies Conference (DMC), Miami, FL, USA

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems (2023)
Presentation / Conference Contribution
Eckstein, M., & Li, K. (2023). N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems. In 2022 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/VPPC55846.2022.10003315

Accurate and fast power loss estimation models based on a good understanding of the occuring loss mechanisms are crucial to achieve high efficiency, high power density and to take full advantage of the superior characteristics of Gallium Nitride (GaN... Read More about N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems.

An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients (2022)
Presentation / Conference Contribution
Radu, C., Li, K., Igic, P., Shepherd, S., Wörndle, A., van der Broeck, C. H., & Faramehr, S. (2022). An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (1-6). https://doi.org/10.1109/WiPDAEurope55971.2022.9936259

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)
Presentation / Conference Contribution
Lu, X., Videt, A., Li, K., Idir, N., & al., E. (2022). Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and witho... Read More about Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles (2022)
Book
Ta, M. C., Li, K., & Bouscayrol, A. (Eds.). (2022). Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles. Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/tvt.2022.3180124

The papers in this special section focus on innovative electrified vehicles. According to the “Global EV Outlook 2021” of International Energy Agency (IEA), ten million electric cars were on the world’s roads in 2020. It was an important year for the... Read More about Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles.

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends (2021)
Journal Article
Van Do, T., Trovao, J. P. F., Li, K., & Boulon, L. (2021). Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends. IEEE Vehicular Technology Magazine, 16(4), 89-98. https://doi.org/10.1109/MVT.2021.3112943

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semico... Read More about Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids (2021)
Journal Article
Dewar, D., Formentini, A., Li, K., Zanchetta, P., & Wheeler, P. (2021). Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids. IET Power Electronics, 14(3), 690-705. https://doi.org/10.1049/pel2.12056

In modern power systems, the proliferation of power electronics converters, and distributed generation raises important issues concerning inter-connected switching units in terms of performance, stability and robustness. Such phenomenon are more prom... Read More about Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids.