Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths
(2018)
Journal Article
The laser micro-drilling of “thru” holes, also known as via holes, in Si, InP and InSb semiconductor wafers was studied using millisecond pulse lengths from an IPG Laser Model YLR-2000 CW multimode 2 kW Ytterbium Fibre Laser and a JK400 (400 W) fibre... Read More about Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths.