All Outputs (13)

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride (2024)
Journal Article
Rousseau, A., Plo, J., Plo, J., Valvin, P., Cheng, T. S., Bradford, J., James, T. S. S., Wrigley, J., Mellor, C. J., Beton, P. H., Novikov, S. V., Jacques, V., Gil, B., & Cassabois, G. (2024). Spatially-resolved UV-C emission in epitaxial monolayer boron nitride. 2D Materials, 11(2), Article 025026. https://doi.org/10.1088/2053-1583/ad2f45

We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescenc... Read More about Spatially-resolved UV-C emission in epitaxial monolayer boron nitride.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article
Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., …Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode (2023)
Journal Article
James, T., Bradford, J., Kerfoot, J., Korolkov, V. V., Alkhamisi, M., Taniguchi, T., …Beton, P. H. (2023). Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode. Molecular Physics, 121(7-8), Article e2197081. https://doi.org/10.1080/00268976.2023.2197081

Monolayers of free base phthalocyanine (H2Pc) are grown on monolayer and few-layer exfoliated flakes of hexagonal boron nitride (hBN) which are subsequently integrated into a van der Waals tunnel diode. This heterostructure consists of two thin hBN f... Read More about Electroluminescence from a phthalocyanine monolayer encapsulated in a van der Waals tunnel diode.

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum (2022)
Journal Article
Zebardastan, N., Bradford, J., Lipton-Duffin, J., MacLeod, J., Ostrikov, K. (., Tomellini, M., & Motta, N. (2023). High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum. Nanotechnology, 34(10), Article 105601. https://doi.org/10.1088/1361-6528/aca8b2

Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon... Read More about High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum.

Coherent Phononics of van der Waals Layers on Nanogratings (2022)
Journal Article
Yan, W., Akimov, A. V., Barra-Burillo, M., Bayer, M., Bradford, J., Gusev, V. E., …Linnik, T. L. (2022). Coherent Phononics of van der Waals Layers on Nanogratings. Nano Letters, 22(16), 6509-6515. https://doi.org/10.1021/acs.nanolett.2c01542

Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain engineering to control classical and quantum phenomena in the unex... Read More about Coherent Phononics of van der Waals Layers on Nanogratings.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., …Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., …Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.

Substrate-mediated growth of oriented, vertically aligned MoS2 nanosheets on vicinal and on-axis SiC substrates (2021)
Journal Article
Bradford, J., Zaganelli, A., Qi, D., Zebardastan, N., Shafiei, M., MacLeod, J., & Motta, N. (2021). Substrate-mediated growth of oriented, vertically aligned MoS2 nanosheets on vicinal and on-axis SiC substrates. Applied Surface Science, 552, Article 149303. https://doi.org/10.1016/j.apsusc.2021.149303

The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the materi... Read More about Substrate-mediated growth of oriented, vertically aligned MoS2 nanosheets on vicinal and on-axis SiC substrates.

MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors (2021)
Journal Article
Amjadipour, M., Bradford, J., Zebardastan, N., Motta, N., & Iacopi, F. (2021). MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors. Nanotechnology, 32(19), Article 195401. https://doi.org/10.1088/1361-6528/abe1f1

The potential of transition metal dichalcogenides such as MoS2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transit... Read More about MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors.

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization (2020)
Journal Article
Bradford, J., Shafiei, M., MacLeod, J., & Motta, N. (2020). Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization. Scientific Reports, 10, Article 17334. https://doi.org/10.1038/s41598-020-74024-w

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct... Read More about Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization.

Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy (2020)
Journal Article
Thomas, J., Bradford, J., Cheng, T. S., Summerfield, A., Wrigley, J., Mellor, C. J., …Beton, P. H. (2020). Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy. 2D Materials, 7(3), Article 035014. https://doi.org/10.1088/2053-1583/ab89e7

Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface i... Read More about Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy.