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Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy

Thomas, James; Bradford, Jonathan; Cheng, Tin S.; Summerfield, Alex; Wrigley, James; Mellor, Chris J.; Khlobystov, Andrei; Foxon, Charles Thomas; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

Authors

James Thomas

Jonathan Bradford

Tin S. Cheng

Alex Summerfield

James Wrigley

Chris J. Mellor

Andrei Khlobystov

Charles Thomas Foxon

Laurence Eaves

Sergei V. Novikov

Peter H. Beton



Abstract

Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface itself possesses unique electronic and magnetic qualities. Herein, we demonstrate lateral heteroepitaxial growth of graphene and hBN by sequential growth using high-temperature molecular beam epitaxy (MBE) on highly ordered pyrolytic graphite (HOPG). We find, using scanning probe microscopy, that graphene growth nucleates at hBN step edges and grows across the surface to form nanoribbons with a controlled width that is highly uniform across the surface. The graphene nanoribbons grow conformally from the armchair edges of hexagonal hBN islands forming multiply connected regions with the growth front alternating from armchair to zigzag in regions nucleated close to the vertices of hexagonal hBN islands. Images with lattice resolution confirm a lateral epitaxial alignment between the hBN and graphene nanoribbons, while the presence of a moiré pattern within the ribbons indicates that some strain relief occurs at the lateral heterojunction. These results demonstrate that high temperature MBE is a viable route towards integrating graphene and hBN in lateral heterostructures.

Journal Article Type Article
Publication Date 2020-07
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 7
Issue 3
Article Number 035014
APA6 Citation Thomas, J., Bradford, J., Cheng, T. S., Summerfield, A., Wrigley, J., Mellor, C. J., …Beton, P. H. (2020). Step-Flow Growth of Graphene-Boron Nitride Lateral Heterostructures by Molecular Beam Epitaxy. 2D Materials, 7(3), https://doi.org/10.1088/2053-1583/ab89e7
DOI https://doi.org/10.1088/2053-1583/ab89e7
Publisher URL https://iopscience.iop.org/article/10.1088/2053-1583/ab89e7
Additional Information This is the Accepted Manuscript version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://iopscience.iop....0.1088/2053-1583/ab89e7
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