All Outputs (3)

Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article
Gonzalez-Munoz, S., Agarwal, K., Castanon, E. G., Kudrynskyi, Z. R., Kovalyuk, Z. D., Spièce, J., …Kolosov, O. V. (2023). Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy. Advanced Materials Interfaces, 10(17), Article 2300081. https://doi.org/10.1002/admi.202300081

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Subnanometer-Wide Indium Selenide Nanoribbons (2023)
Journal Article
Cull, W. J., Skowron, S. T., Hayter, R., Stoppiello, C. T., Rance, G. A., Biskupek, J., …Khlobystov, A. N. (2023). Subnanometer-Wide Indium Selenide Nanoribbons. ACS Nano, 17(6), 6062-6072. https://doi.org/10.1021/acsnano.3c00670

Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In th... Read More about Subnanometer-Wide Indium Selenide Nanoribbons.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.