Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

Trentin, Andrew; De Lillo, Liliana; Empringham, Lee; Wheeler, Patrick; Clare, Jon C.

Abstract

This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develop a loss model which will help engineers to design and develop matrix converter circuits using these types of devices. Particular attention is given in the paper to the discrepancies found between the data-sheet values and the measured data. The EMI performance of the two matrix converters is also determined and the implication of using high speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design.

• Journal Article Type: Article
• Publication Date: Jun 1, 2015
• Deposit Date: Mar 8, 2016
• Publicly Available Date: Mar 8, 2016
• Journal: IEEE Journal of Emerging and Selected Topics in Power Electronics
• Electronic ISSN: 2168-6785
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 3
• Issue: 2
• DOI: https://doi.org/10.1109/JESTPE.2014.2381001
• Keywords: IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC)
• Public URL: https://nottingham-repository.worktribe.com/output/983583
• Publisher URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6985581
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