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Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

Trentin, Andrew; De Lillo, Liliana; Empringham, Lee; Wheeler, Patrick; Clare, Jon C.

Authors

Andrew Trentin andrew.trentin@nottingham.ac.uk

Liliana De Lillo eezld@exmail.nottingham.ac.uk

Lee Empringham lee.empringham@nottingham.ac.uk

Patrick Wheeler pat.wheeler@nottingham.ac.uk

Jon C. Clare jon.clare@nottingham.ac.uk



Abstract

This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develop a loss model which will help engineers to design and develop matrix converter circuits using these types of devices. Particular attention is given in the paper to the discrepancies found between the data-sheet values and the measured data. The EMI performance of the two matrix converters is also determined and the implication of using high speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design.

Journal Article Type Article
Publication Date Jun 1, 2015
Journal IEEE Journal of Emerging and Selected Topics in Power Electronics
Electronic ISSN 2168-6785
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 3
Issue 2
APA6 Citation Trentin, A., De Lillo, L., Empringham, L., Wheeler, P., & Clare, J. C. (2015). Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 3(2), doi:10.1109/JESTPE.2014.2381001
DOI https://doi.org/10.1109/JESTPE.2014.2381001
Keywords IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC)
Publisher URL http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6985581
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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