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Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Oeder, Thorsten; Castellazzi, Alberto; Pfost, Martin

Authors

Thorsten Oeder

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Martin Pfost



Abstract

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.

Citation

Oeder, T., Castellazzi, A., & Pfost, M. (2017). Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectronics Reliability, 76-77, https://doi.org/10.1016/j.microrel.2017.06.046

Journal Article Type Article
Acceptance Date Jun 21, 2017
Online Publication Date Jul 1, 2017
Publication Date Sep 1, 2017
Deposit Date Aug 25, 2017
Publicly Available Date Aug 25, 2017
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 76-77
DOI https://doi.org/10.1016/j.microrel.2017.06.046
Keywords Gallium nitride (GaN), High electron mobility transistor (HEMT), P-doped gate (p-gate), Short-circuit, Safe operating area, Electrical failure, Thermal failure
Public URL http://eprints.nottingham.ac.uk/id/eprint/45148
Publisher URL http://www.sciencedirect.com/science/article/pii/S0026271417302342
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





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