Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Oeder, Thorsten; Castellazzi, Alberto; Pfost, Martin

Abstract

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.

Citation

Oeder, T., Castellazzi, A., & Pfost, M. (2017). Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectronics Reliability, 76-77, https://doi.org/10.1016/j.microrel.2017.06.046

• Journal Article Type: Article
• Acceptance Date: Jun 21, 2017
• Online Publication Date: Jul 1, 2017
• Publication Date: Sep 1, 2017
• Deposit Date: Aug 25, 2017
• Publicly Available Date: Aug 25, 2017
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 76-77
• DOI: https://doi.org/10.1016/j.microrel.2017.06.046
• Keywords: Gallium nitride (GaN), High electron mobility transistor (HEMT), P-doped gate (p-gate), Short-circuit, Safe operating area, Electrical failure, Thermal failure
• Public URL: http://eprints.nottingham.ac.uk/id/eprint/45148
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0026271417302342
• Copyright Statement: Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0