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Moiré-modulated conductance of hexagonal boron nitride tunnel barriers

Summerfield, Alex; Kozikov, Aleksey; Cheng, Tin S.; Davies, Andrew; Cho, Yong-Jin; Khlobystov, Andrei N.; Mellor, Christopher J.; Foxon, C. Thomas; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novoselov, Kostya S.; Novikov, Sergei V.; Beton, Peter H.

Authors

Alex Summerfield alex.summerfield@nottingham.ac.uk

Aleksey Kozikov Aleksey.kozikov@manchester.ac.uk

Tin S. Cheng ppzct@exmail.nottingham.ac.uk

Andrew Davies pcyzad@hotmail.com

Yong-Jin Cho yjcho@alumni.nd.edu

Andrei N. Khlobystov pczank@exmail.nottingham.ac.uk

Christopher J. Mellor Chris.Mellor@nottingham.ac.uk

C. Thomas Foxon tom.foxon@nottingham.ac.uk

Kenji Watanabe WATANABE.Kenji.AML@nims.go.jp

Takashi Taniguchi TANIGUCHI.Takashi@nims.go.jp

Laurence Eaves laurence.eaves@nottingham.ac.uk

Kostya S. Novoselov konstantin.novoselov@manchester.ac.uk

Sergei V. Novikov sergei.novikov@nottingham.ac.uk

Peter H. Beton peter.beton@nottingham.ac.uk



Abstract

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.

Journal Article Type Article
Journal Nano Letters
Print ISSN 1530-6984
Electronic ISSN 1530-6984
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
APA6 Citation Summerfield, A., Kozikov, A., Cheng, T. S., Davies, A., Cho, Y., Khlobystov, A. N., …Beton, P. H. (in press). Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters, https://doi.org/10.1021/acs.nanolett.8b01223
DOI https://doi.org/10.1021/acs.nanolett.8b01223
Keywords boron nitride ; epitaxy ; growth ; tunnelling ; superlattice
; moiré ; heterostructure
Publisher URL https://pubs.acs.org/doi/10.1021/acs.nanolett.8b01223
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information This document is the Accepted Manuscript version of a Published Work that appeared in final form in
Nano Letters, copyright © American Chemical Society 2018 after peer review and technical editing by t he publisher.
To access the final edited and published work see https://pubs.acs.org/do...21/acs.nanolett.8b01223

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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