Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

Pierucci, Debora; Zribi, Jihene; Henck, Hugo; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fevre, Patrick; Gil, Bernard; Summerfield, Alex; Beton, Peter H.; Novikov, Sergei V.; Cassabois, Guillaume; Rault, Julien E.; Ouerghi, Abdelkarim

Abstract

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.

Citation

Pierucci, D., Zribi, J., Henck, H., Chaste, J., Silly, M. G., Bertran, F., Le Fevre, P., Gil, B., Summerfield, A., Beton, P. H., Novikov, S. V., Cassabois, G., Rault, J. E., & Ouerghi, A. (2018). Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112(25), https://doi.org/10.1063/1.5029220

• Journal Article Type: Article
• Acceptance Date: May 28, 2018
• Publication Date: Jun 18, 2018
• Deposit Date: Jul 10, 2018
• Publicly Available Date: Jul 10, 2018
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 112
• Issue: 25
• DOI: https://doi.org/10.1063/1.5029220
• Keywords: Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy
• Public URL: https://nottingham-repository.worktribe.com/output/939568
• Publisher URL: https://aip.scitation.org/doi/10.1063/1.5029220
• Contract Date: Jul 10, 2018