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Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

Pierucci, Debora; Zribi, Jihene; Henck, Hugo; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fevre, Patrick; Gil, Bernard; Summerfield, Alex; Beton, Peter H.; Novikov, Sergei V.; Cassabois, Guillaume; Rault, Julien E.; Ouerghi, Abdelkarim

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure Thumbnail


Authors

Debora Pierucci

Jihene Zribi

Hugo Henck

Julien Chaste

Mathieu G. Silly

François Bertran

Patrick Le Fevre

Bernard Gil

Alex Summerfield

PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics

Guillaume Cassabois

Julien E. Rault

Abdelkarim Ouerghi



Abstract

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.

Citation

Pierucci, D., Zribi, J., Henck, H., Chaste, J., Silly, M. G., Bertran, F., …Ouerghi, A. (2018). Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112(25), https://doi.org/10.1063/1.5029220

Journal Article Type Article
Acceptance Date May 28, 2018
Publication Date Jun 18, 2018
Deposit Date Jul 10, 2018
Publicly Available Date Mar 28, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 0003-6951
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 112
Issue 25
DOI https://doi.org/10.1063/1.5029220
Keywords Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy
Public URL https://nottingham-repository.worktribe.com/output/939568
Publisher URL https://aip.scitation.org/doi/10.1063/1.5029220

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