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Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

Yan, Faguang; Zhao, Lixia; Patan�, Amalia; Hu, Ping'an; Wei, Xia; Luo, Wengang; Zhang, Dong; Lv, Quanshan; Feng, Qi; Shen, Chao; Chang, Kai; Eaves, Laurence; Wang, Kaiyou

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures Thumbnail


Authors

Faguang Yan

Lixia Zhao

Ping'an Hu

Xia Wei

Wengang Luo

Dong Zhang

Quanshan Lv

Qi Feng

Chao Shen

Kai Chang

Kaiyou Wang



Abstract

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast ( ~ 1 ?s), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies.

Citation

Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., …Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), Article 27LT01. https://doi.org/10.1088/1361-6528/aa749e

Journal Article Type Article
Acceptance Date May 22, 2017
Online Publication Date Jun 14, 2017
Publication Date Jun 14, 2017
Deposit Date May 23, 2017
Publicly Available Date Jun 14, 2017
Journal Nanotechnology
Print ISSN 0957-4484
Electronic ISSN 1361-6528
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 28
Issue 27
Article Number 27LT01
DOI https://doi.org/10.1088/1361-6528/aa749e
Keywords Multicolor, gallium selenide, indium selenide, van der Waals heterostructure, built-in potential
Public URL https://nottingham-repository.worktribe.com/output/861537
Publisher URL http://iopscience.iop.org/article/10.1088/1361-6528/aa749e

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