Faguang Yan
Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
Yan, Faguang; Zhao, Lixia; Patan�, Amalia; Hu, Ping'an; Wei, Xia; Luo, Wengang; Zhang, Dong; Lv, Quanshan; Feng, Qi; Shen, Chao; Chang, Kai; Eaves, Laurence; Wang, Kaiyou
Authors
Lixia Zhao
Professor AMALIA PATANE AMALIA.PATANE@NOTTINGHAM.AC.UK
Professor of Physics
Ping'an Hu
Xia Wei
Wengang Luo
Dong Zhang
Quanshan Lv
Qi Feng
Chao Shen
Kai Chang
LAURENCE EAVES laurence.eaves@nottingham.ac.uk
Research Professor
Kaiyou Wang
Abstract
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast ( ~ 1 ?s), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies.
Citation
Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., …Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), Article 27LT01. https://doi.org/10.1088/1361-6528/aa749e
Journal Article Type | Article |
---|---|
Acceptance Date | May 22, 2017 |
Online Publication Date | Jun 14, 2017 |
Publication Date | Jun 14, 2017 |
Deposit Date | May 23, 2017 |
Publicly Available Date | Jun 14, 2017 |
Journal | Nanotechnology |
Print ISSN | 0957-4484 |
Electronic ISSN | 1361-6528 |
Publisher | IOP Publishing |
Peer Reviewed | Peer Reviewed |
Volume | 28 |
Issue | 27 |
Article Number | 27LT01 |
DOI | https://doi.org/10.1088/1361-6528/aa749e |
Keywords | Multicolor, gallium selenide, indium selenide, van der Waals heterostructure, built-in potential |
Public URL | https://nottingham-repository.worktribe.com/output/861537 |
Publisher URL | http://iopscience.iop.org/article/10.1088/1361-6528/aa749e |
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
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