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Microwave Generation in Synchronized Semiconductor Superlattices

Authors

M.B. Gaifullin

N.V. Alexeeva

A.E. Hramov

V.V. Makarov

V.A. Maksimenko

A.A. Koronovskii

M.T. Greenaway

F.V. Kusmartsev

A.G. Balanov



Abstract

We study high-frequency generation in a system of electromagnetically coupled semiconductor superlattices fabricated on the same doped substrate. Applying a bias voltage to a single superlattice generates high-frequency current oscillations. We demonstrate that within a certain range of the applied voltage, the current oscillations within the superlattices can be self-synchronized, which leads to a dramatic rise in the generated microwave power. These results, which are in good agreement with our numerical model, open a promising practical route towards the design of high-power miniature microwave generators.

Citation

Gaifullin, M., Alexeeva, N., Hramov, A., Makarov, V., Maksimenko, V., Koronovskii, A., …Balanov, A. (2017). Microwave Generation in Synchronized Semiconductor Superlattices. Physical Review Applied, 7(4), Article 044024. https://doi.org/10.1103/PhysRevApplied.7.044024

Journal Article Type Article
Acceptance Date Mar 30, 2017
Online Publication Date Apr 27, 2017
Publication Date Apr 27, 2017
Deposit Date May 4, 2017
Publicly Available Date May 4, 2017
Journal Physical Review Applied
Electronic ISSN 2331-7019
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 7
Issue 4
Article Number 044024
DOI https://doi.org/10.1103/PhysRevApplied.7.044024
Public URL https://nottingham-repository.worktribe.com/output/857803
Publisher URL https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.7.044024

Files

PhysRevApplied.7.044024.pdf (652 Kb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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