Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices

Gater, M.; Adawi, A. M.; Kemp, N. T.

Abstract

We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) wafer containing metal Pd contact electrodes yields devices that exhibit a number of complex properties including memristive and capacitive effects as well as multiple non-zero-crossing current-voltage hysteresis effects. The devices also show a reaction to a varying gate bias. An increasingly positive gate led to the devices displaying a linear ohmic I-V response while an increasingly negative gate bias drove the system to behave more memristive with a widening hysteresis loop.

Citation

Gater, M., Adawi, A. M., & Kemp, N. T. (2022, May). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. Presented at ISCAS 2022, Austin, Texas

• Presentation Conference Type: Edited Proceedings
• Conference Name: ISCAS 2022
• Start Date: May 28, 2022
• End Date: Jun 1, 2022
• Acceptance Date: Jan 14, 2022
• Online Publication Date: Jun 1, 2022
• Publication Date: Jun 1, 2022
• Deposit Date: Jun 15, 2022
• Publicly Available Date: Jun 20, 2022
• Series Title: IEEE International Symposium on Circuits and Systems
• Series ISSN: 2158-1525
• Book Title: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
• Keywords: memristor; capacitance; memtransistor; three- terminal; transition metal dichalcogenides; MoS2
• Public URL: https://nottingham-repository.worktribe.com/output/8498087
• Related Public URLs: https://ieeexplore.ieee.org/Xplore/; https://www.iscas2022.org/