Wendy L. Sarney
Intermixing studies in GaN_1−xSb_x highly mismatched alloys
Sarney, Wendy L.; Svensson, Stefan P.; Ting, Min; Segercrantz, Natalie; Walukiewicz, Wladek; Yu, Kin Man; Martin, Robert W.; Novikov, Sergei V.; Foxon, C. T.
Authors
Stefan P. Svensson
Min Ting
Natalie Segercrantz
Wladek Walukiewicz
Kin Man Yu
Robert W. Martin
SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
C. T. Foxon
Abstract
GaN1−xSbx with x~ 5-7% is a highly mismatched alloy predicted to have favorable properties for application as an electrode in a photo-electrochemical cell for solar water splitting. In this study, we grew GaN1−xSbx under conditions intended to induce phase segregation. Prior experiments with the similar alloy GaN1−xAsx, the tendency of Sb to surfact, and the low growth temperatures needed to incorporate Sb, all suggested that GaN1−xSbx alloys would likely exhibit phase segregation. We found that, except for very high Sb compositions, this was not the case, and that instead interdiffusion dominated. Characteristics measured by optical absorption were similar to intentionally grown bulk alloys for the same composition. Furthermore, the alloys produced by this method maintained crystallinity for very high Sb compositions, and allowed higher overall Sb compositions. This method may allow higher temperature growth while still achieving needed Sb compositions for solar water splitting applications.
Citation
Sarney, W. L., Svensson, S. P., Ting, M., Segercrantz, N., Walukiewicz, W., Yu, K. M., …Foxon, C. T. (2017). Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56(3), B64-B69. https://doi.org/10.1364/AO.56.000B64
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 27, 2016 |
Online Publication Date | Oct 28, 2016 |
Publication Date | Jan 20, 2017 |
Deposit Date | Jan 4, 2017 |
Publicly Available Date | Jan 4, 2017 |
Journal | Applied Optics |
Print ISSN | 1559-128X |
Electronic ISSN | 2155-3165 |
Publisher | Optical Society of America |
Peer Reviewed | Peer Reviewed |
Volume | 56 |
Issue | 3 |
Pages | B64-B69 |
DOI | https://doi.org/10.1364/AO.56.000B64 |
Public URL | https://nottingham-repository.worktribe.com/output/839703 |
Publisher URL | https://www.osapublishing.org/ao/abstract.cfm?uri=ao-56-3-B64 |
Additional Information | © 2016 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. |
Files
OSA_revised-sep-27_v1.pdf
(<nobr>1.1 Mb</nobr>)
PDF
You might also like
Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods
(2018)
Journal Article
Direct band-gap crossover in epitaxial monolayer boron nitride
(2019)
Journal Article
Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures
(2021)
Journal Article
Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride
(2022)
Journal Article