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Reliable integration of a high performance multi-chip half-bridge SiC power module

Mouawad, Bassem; Li, Jianfeng; Castellazzi, Alberto; Johnson, Christopher Mark

Authors

Jianfeng Li

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

MARK JOHNSON mark.johnson@nottingham.ac.uk
Professor of Advancedpower Conversion



Abstract

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have a very low parasitic inductance in order to have high switching frequencies and ensure a good reliability for long-term operation.

Citation

Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module

Conference Name 6th Electronics System-Integration Technology Conference (ESTC’16)
End Date Sep 16, 2016
Acceptance Date Apr 8, 2016
Deposit Date Oct 3, 2016
Peer Reviewed Peer Reviewed
Public URL http://eprints.nottingham.ac.uk/id/eprint/37317
Related Public URLs http://www.estc2016.eu/estc-2016/about-estc/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf

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Reliable integration of a high performance multi-chip half-bridge SiC power module.pdf (1.2 Mb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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