Reliable integration of a high performance multi-chip half-bridge SiC power module

Mouawad, Bassem; Li, Jianfeng; Castellazzi, Alberto; Johnson, Christopher Mark

Abstract

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have a very low parasitic inductance in order to have high switching frequencies and ensure a good reliability for long-term operation.

Citation

Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module

• Conference Name: 6th Electronics System-Integration Technology Conference (ESTC’16)
• End Date: Sep 16, 2016
• Acceptance Date: Apr 8, 2016
• Deposit Date: Oct 3, 2016
• Peer Reviewed: Peer Reviewed
• Public URL: http://eprints.nottingham.ac.uk/id/eprint/37317
• Related Public URLs: http://www.estc2016.eu/estc-2016/about-estc/
• Copyright Statement: Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf