Emre Gurpinar
Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco; Yang, Yongheng; Blaabjerg, Frede
Authors
Alberto Castellazzi
Francesco Iannuzzo
Yongheng Yang
Frede Blaabjerg
Abstract
In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.
Citation
Gurpinar, E., Castellazzi, A., Iannuzzo, F., Yang, Y., & Blaabjerg, F. (2016, September). Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter. Presented at 8th Annual IEEE Energy Conversion Congress & Exposition (ECCE 2016), Milwaukee, WI, USA
Presentation Conference Type | Edited Proceedings |
---|---|
Conference Name | 8th Annual IEEE Energy Conversion Congress & Exposition (ECCE 2016) |
Start Date | Sep 18, 2016 |
End Date | Sep 22, 2016 |
Acceptance Date | May 1, 2016 |
Online Publication Date | Feb 16, 2017 |
Publication Date | 2016 |
Deposit Date | Jul 19, 2016 |
Publicly Available Date | Dec 31, 2016 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Pages | 1-8 |
Book Title | 2016 IEEE Energy Conversion Congress and Exposition (ECCE) - Proceedings |
ISBN | 978-1-5090-0738-7 |
DOI | https://doi.org/10.1109/ECCE.2016.7855540 |
Keywords | Wide Bandgap (WBG) Power Devices, Gallium-Nitride (GaN), HEMT, Three-Level Active Neutral Point Clamped (3L-ANPC) Converter, Photovoltaic (PV) Systems |
Public URL | https://nottingham-repository.worktribe.com/output/782187 |
Publisher URL | https://ieeexplore.ieee.org/document/7855540/ |
Related Public URLs | http://www.ieee-ecce.org/ https://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=35489 |
Additional Information | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Contract Date | Jul 19, 2016 |
Files
Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter.pdf
(780 Kb)
PDF
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search