Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

Abstract

We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

Citation

Tokaç, M., Wang, M., Jaiswal, S., Rushforth, A. W., Gallagher, B. L., Atkinson, D., & Hindmarch, A. T. (2015). Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance. AIP Advances, 5(12), 127108. https://doi.org/10.1063/1.4937556

• Journal Article Type: Article
• Acceptance Date: Nov 27, 2015
• Online Publication Date: Dec 7, 2015
• Publication Date: Dec 7, 2015
• Deposit Date: Sep 22, 2016
• Publicly Available Date: Sep 22, 2016
• Journal: AIP Advances
• Electronic ISSN: 2158-3226
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 12
• Article Number: 127108
• Pages: 127108
• DOI: https://doi.org/10.1063/1.4937556
• Public URL: https://nottingham-repository.worktribe.com/output/770181
• Publisher URL: http://scitation.aip.org/content/aip/journal/adva/5/12/10.1063/1.4937556