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Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance



M. Wang

S. Jaiswal

B. L. Gallagher

D. Atkinson

A. T. Hindmarch


We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.


Tokaç, M., Wang, M., Jaiswal, S., Rushforth, A. W., Gallagher, B. L., Atkinson, D., & Hindmarch, A. T. (2015). Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance. AIP Advances, 5(12), 127108.

Journal Article Type Article
Acceptance Date Nov 27, 2015
Online Publication Date Dec 7, 2015
Publication Date Dec 7, 2015
Deposit Date Sep 22, 2016
Publicly Available Date Sep 22, 2016
Journal AIP Advances
Electronic ISSN 2158-3226
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 5
Issue 12
Article Number 127108
Pages 127108
Public URL
Publisher URL


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