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Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

Tokaç, M.; Wang, M.; Jaiswal, S.; Rushforth, A. W.; Gallagher, B. L.; Atkinson, D.; Hindmarch, A. T.

Authors

M. Tokaç

MU WANG Mu.Wang@nottingham.ac.uk
Research Fellow in Antiferromagnetic Spintronics

B. L. Gallagher

D. Atkinson

A. T. Hindmarch



Abstract

We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

Journal Article Type Article
Publication Date Dec 7, 2015
Journal AIP Advances
Electronic ISSN 2158-3226
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 5
Issue 12
Article Number 127108
Pages 127108
APA6 Citation TokaƧ, M., Wang, M., Jaiswal, S., Rushforth, A. W., Gallagher, B. L., Atkinson, D., & Hindmarch, A. T. (2015). Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance. AIP Advances, 5(12), 127108. https://doi.org/10.1063/1.4937556
DOI https://doi.org/10.1063/1.4937556
Publisher URL http://scitation.aip.org/content/aip/journal/adva/5/12/10.1063/1.4937556
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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