Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari, Issam; Sengouga, Nouredine; Labed, Madani; Tibermacine, Toufik; Mari, Riaz; Henini, Mohamed

Abstract

Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I-V and C-V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I-V and C-V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C-V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

Citation

Lakhdari, I., Sengouga, N., Labed, M., Tibermacine, T., Mari, R., & Henini, M. (2022). Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes. Semiconductor Science and Technology, 37(5), Article 055022. https://doi.org/10.1088/1361-6641/ac612a

• Journal Article Type: Article
• Acceptance Date: Mar 25, 2022
• Online Publication Date: Apr 13, 2022
• Publication Date: Apr 13, 2022
• Deposit Date: Apr 1, 2022
• Publicly Available Date: Apr 14, 2023
• Journal: Semiconductor Science and Technology
• Print ISSN: 0268-1242
• Electronic ISSN: 1361-6641
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 37
• Issue: 5
• Article Number: 055022
• DOI: https://doi.org/10.1088/1361-6641/ac612a
• Keywords: Materials Chemistry; Electrical and Electronic Engineering; Condensed Matter Physics; Electronic, Optical and Magnetic Materials
• Public URL: https://nottingham-repository.worktribe.com/output/7683584
• Publisher URL: https://iopscience.iop.org/article/10.1088/1361-6641/ac612a
• Additional Information: This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://iopscience.iop.org/article/10.1088/1361-6641/ac612a