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High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

Li, Jing; Yang, Chao; Liu, Lei; Cao, Haicheng; Lin, Shan; Xi, Xin; Li, Xiaodong; Ma, Zhanhong; Wang, Kaiyou; Patanè, Amalia; Zhao, Lixia

Authors

Jing Li

Chao Yang

Lei Liu

Haicheng Cao

Shan Lin

Xin Xi

Xiaodong Li

Zhanhong Ma

Kaiyou Wang

Lixia Zhao



Abstract

The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches towards enhanced performance, miniaturization, and integration beyond current Si-based technologies. Here, we report on the design and realization of high-performance InGaN-based resonant cavity photodiodes with high-reflectivity lateral porous GaN distributed Bragg reflectors. The well-controlled porosification of GaN on the 2-inch wafers enables us to design and fabricate optical components, unlocking the potential of nitride semiconductors for several applications. These resonant-cavity-enhanced photodiodes, which have a 12 nm-thick optically active region, exhibit a high responsivity (~0.1 A W-1) to blue-light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible 2 light at well-defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability and low-power consumption for VLC, with potential for integration of different functionalities, i.e. light emission and detection, on a single chip without additional light filters.

Journal Article Type Article
Publication Date Apr 3, 2020
Journal Advanced Optical Materials
Electronic ISSN 2195-1071
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 8
Issue 7
Article Number 1901276
APA6 Citation Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., …Zhao, L. (2020). High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes. Advanced Optical Materials, 8(7), https://doi.org/10.1002/adom.201901276
DOI https://doi.org/10.1002/adom.201901276
Keywords lateral porous GaN distributed Bragg reflectors; resonant cavity; high responsivity; high wavelength selectivity; Indium Gallium Nitride
Publisher URL https://onlinelibrary.wiley.com/doi/full/10.1002/adom.201901276
Additional Information Received: 2019-07-26; Published: 2020-02-17
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