High Responsivity and Wavelength Selectivity of GaN?Based Resonant Cavity Photodiodes

Abstract

The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches towards enhanced performance, miniaturization, and integration beyond current Si-based technologies. Here, we report on the design and realization of high-performance InGaN-based resonant cavity photodiodes with high-reflectivity lateral porous GaN distributed Bragg reflectors. The well-controlled porosification of GaN on the 2-inch wafers enables us to design and fabricate optical components, unlocking the potential of nitride semiconductors for several applications. These resonant-cavity-enhanced photodiodes, which have a 12 nm-thick optically active region, exhibit a high responsivity (~0.1 A W-1) to blue-light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible 2 light at well-defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability and low-power consumption for VLC, with potential for integration of different functionalities, i.e. light emission and detection, on a single chip without additional light filters.

Citation

Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., …Zhao, L. (2020). High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes. Advanced Optical Materials, 8(7), Article 1901276. https://doi.org/10.1002/adom.201901276

• Journal Article Type: Article
• Acceptance Date: Dec 27, 2019
• Online Publication Date: Feb 17, 2020
• Publication Date: Apr 3, 2020
• Deposit Date: Jan 8, 2020
• Publicly Available Date: Feb 18, 2021
• Journal: Advanced Optical Materials
• Electronic ISSN: 2195-1071
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 8
• Issue: 7
• Article Number: 1901276
• DOI: https://doi.org/10.1002/adom.201901276
• Keywords: lateral porous GaN distributed Bragg reflectors; resonant cavity; high responsivity; high wavelength selectivity; Indium Gallium Nitride
• Public URL: https://nottingham-repository.worktribe.com/output/3687895
• Publisher URL: https://onlinelibrary.wiley.com/doi/full/10.1002/adom.201901276
• Additional Information: Received: 2019-07-26; Published: 2020-02-17