A two-dimensional spin field-effect switch

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; Dery, Hanan; Hueso, Luis E.; Casanova, F�lix

Abstract

© The Author(s) 2016. Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

Citation

Yan, W., Txoperena, O., Llopis, R., Dery, H., Hueso, L. E., & Casanova, F. (2016). A two-dimensional spin field-effect switch. Nature Communications, 7(1), https://doi.org/10.1038/ncomms13372

• Journal Article Type: Article
• Acceptance Date: Sep 27, 2016
• Online Publication Date: Nov 11, 2016
• Publication Date: 2016-12
• Deposit Date: Nov 14, 2019
• Publicly Available Date: Jan 20, 2020
• Journal: Nature Communications
• Electronic ISSN: 2041-1723
• Publisher: Nature Publishing Group
• Peer Reviewed: Peer Reviewed
• Volume: 7
• Issue: 1
• Article Number: 13372
• DOI: https://doi.org/10.1038/ncomms13372
• Public URL: https://nottingham-repository.worktribe.com/output/3084918
• Publisher URL: https://www.nature.com/articles/ncomms13372
• Additional Information: Received: 4 July 2016; Accepted: 27 September 2016; First Online: 11 November 2016; : The authors declare no competing financial interests.