Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy

Al Huwayz, M.; Jameel, D.A.; Azevedo, Walter M.; Felix, Jorlandio F.; Al Saqri, N.A.; Lemine, O. M.; Abu Alrub, S.; Henini, M.

Abstract

This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The research explores the electrical characteristics of the lasers before and after being exposed to gamma radiation employing current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and Laplace DLTS techniques. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. The I-V results revealed that the ideality factor (n) and built-in voltage were increased in Sample A and Sample B after radiation. Nonetheless, the series resistance (Rs) at room temperature decreased in both samples after radiation. Overall, this study provides valuable insights into the effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot lasers and highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices.

Citation

Al Huwayz, M., Jameel, D., Azevedo, W. M., Felix, J. . F., Al Saqri, N., Lemine, O. M., …Henini, M. (2023). Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy. Physical Chemistry Chemical Physics, 26(1), 445-454. https://doi.org/10.1039/d3cp03865c

• Journal Article Type: Article
• Acceptance Date: Nov 13, 2023
• Online Publication Date: Nov 25, 2023
• Publication Date: Nov 25, 2023
• Deposit Date: Dec 9, 2023
• Publicly Available Date: Nov 26, 2024
• Journal: Physical Chemistry Chemical Physics
• Print ISSN: 1463-9076
• Electronic ISSN: 1463-9084
• Publisher: Royal Society of Chemistry
• Peer Reviewed: Peer Reviewed
• Volume: 26
• Issue: 1
• Pages: 445-454
• DOI: https://doi.org/10.1039/d3cp03865c
• Keywords: Physical and Theoretical Chemistry; General Physics and Astronomy
• Public URL: https://nottingham-repository.worktribe.com/output/28248104
• Publisher URL: https://pubs.rsc.org/en/Content/ArticleLanding/2023/CP/D3CP03865C
• Additional Information: This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication. Accepted Manuscripts are published online shortly after acceptance, before technical editing, formatting and proof reading. Using this free service, authors can make their results available to the community, in citable form, before we publish the edited article. We will replace this Accepted Manuscript with the edited and formatted Advance Article as soon as it is available.