Determination of electronic band structure of quaternary ferromagnetic Ga0.97- y Mn0.03CryAs epitaxial layers

Donmez, Omer; Gunes, Mustafa; Henini, Mohamed; Erol, Ayse

Abstract

Introducing transition metals to conventional III-V semiconductors anomalously changes their fundamental characteristics, such as electronic, magnetic, and structural properties. In this study, we show that the valence band anti-crossing (VBAC) model can be exploited to calculate the electronic band structure of the quaternary Ga0.97-xMn0.03CrxAs epitaxial layers. In this model, the localized Mn and Cr defect states interact with the valence band states (VB), reconstructing VBs and splitting each VB state. The splitting top of the VB state forms an impurity band (IB) and fundamental VB edge. Photomodulated reflectance (PR) spectroscopy is exploited to determine optical transition energies at room temperature. PR spectra were analyzed with the third derivative functional form (TDFF) signal's line shape. The experimental optical transition energies, including band-to-band and spin split-off band transitions, match the calculated optical transition energies by the VBAC model. In the calculation, the interaction energy between localized Mn/Cr-energy level and valence band edges is experimentally determined as 0.7eV.

Citation

Donmez, O., Gunes, M., Henini, M., & Erol, A. (2023). Determination of electronic band structure of quaternary ferromagnetic Ga0.97- y Mn0.03CryAs epitaxial layers. Physica B: Condensed Matter, 665, Article 415074. https://doi.org/10.1016/j.physb.2023.415074

• Journal Article Type: Article
• Acceptance Date: Jun 18, 2023
• Online Publication Date: Jun 21, 2023
• Publication Date: Sep 15, 2023
• Deposit Date: Jun 24, 2023
• Publicly Available Date: Jun 22, 2024
• Journal: Physica B: Condensed Matter
• Print ISSN: 0921-4526
• Electronic ISSN: 1873-2135
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 665
• Article Number: 415074
• DOI: https://doi.org/10.1016/j.physb.2023.415074
• Keywords: Magnetic semiconductor; Band anti-crossing model; GaMnCrAs; Photoreflectance
• Public URL: https://nottingham-repository.worktribe.com/output/22186800
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0921452623004416?via%3Dihub
• Additional Information: This article is maintained by: Elsevier; Article Title: Determination of electronic band structure of quaternary ferromagnetic Ga0.97-xMn0.03CrxAs epitaxial layers; Journal Title: Physica B: Condensed Matter; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.physb.2023.415074