Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes

Almalki, Abdulaziz; Madani, Labed; Sengouga, Nouredine; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Chauhan, Jasbinder S.; Henini, Mohamed; Galeti, Helder Vinicius Avanço; Gobato, Yara Galvão; de Godoy, Marcio Peron Franco; Andrade, Marcelo B.; Souto, Sérgio; Zhou, Hong; Wang, Boyan; Xiao, Ming; Qin, Yuan; Zhang, Yuhao

Abstract

In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga2O3 heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga2O3 and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (VGa + VO) in the annealed β-Ga2O3 samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E2 trap (Ec-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 1019 cm−3 and E2 trap depth into the surface of β-Ga2O3 layer of about 0.220 µm and the effect of the most observed Ec-0.75 eV trap level in β-Ga2O3. These results unveil comprehensive physics in NiO/β-Ga2O3heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-Ga2O3devices.

Citation

Almalki, A., Madani, L., Sengouga, N., Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Chauhan, J. S., Henini, M., Galeti, H. V. A., Gobato, Y. G., de Godoy, M. P. F., Andrade, M. B., Souto, S., Zhou, H., Wang, B., Xiao, M., Qin, Y., & Zhang, Y. (2023). Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes. Materials Today Electronics, 4, Article 100042. https://doi.org/10.1016/j.mtelec.2023.100042

• Journal Article Type: Article
• Acceptance Date: Jun 4, 2023
• Online Publication Date: Jun 7, 2023
• Publication Date: 2023-06
• Deposit Date: Jun 12, 2023
• Publicly Available Date: Jun 13, 2023
• Journal: Materials Today Electronics
• Electronic ISSN: 2772-9494
• Peer Reviewed: Peer Reviewed
• Volume: 4
• Article Number: 100042
• DOI: https://doi.org/10.1016/j.mtelec.2023.100042
• Keywords: NiO/β-Ga2O3 heterojunction diodes; Defects; Deep level transient spectroscopy; Photoluminescence; Raman; Electrical characteristics; Modeling
• Public URL: https://nottingham-repository.worktribe.com/output/21646469
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S2772949423000189