Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

Hussein, Abdallah; Mouawad, Bassem; Castellazzi, Alberto

Abstract

Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode for current free-wheeling (i.e., no antiparallel external diode chips are used). This paper presents a thorough parametric characterization of the module switching performance. Single-chip and parallel-chip operation are investigated in both double-pulsea type tests and realistic singlephase inverter operation.

• Conference Name: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• Conference Location: Chicago, IL, USA
• Start Date: May 13, 2018
• End Date: May 17, 2018
• Acceptance Date: Dec 22, 2017
• Online Publication Date: Jun 25, 2018
• Publication Date: Jun 22, 2018
• Deposit Date: Aug 14, 2018
• Publicly Available Date: Aug 15, 2018
• Pages: 463-466
• Series ISSN: 1946-0201
• Book Title: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• ISBN: 978-1-5386-2928-4
• DOI: https://doi.org/10.1109/ISPSD.2018.8393703
• Keywords: Silicon carbide; SiC MOSFETs; power modules; inverter.
• Public URL: https://nottingham-repository.worktribe.com/output/1032765
• Publisher URL: https://ieeexplore.ieee.org/document/8393703/
• Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.