Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As
(2016)
Journal Article
Wang, M., Marshall, R. A., Edmonds, K. W., Rushforth, A., Campion, R., & Gallagher, B. (2016). Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. Physical Review B, 93(18), Article 184417. https://doi.org/10.1103/PhysRevB.93.184417
We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor
(Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of prop...
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