Outputs (30)

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), Article 1805491. https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., …Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), Article 075408. https://doi.org/10.1103/PhysRevB.98.075408

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure (2018)
Journal Article
Lee, Y., Pisoni, R., Overweg, H., Eich, M., Rickhaus, P., Patane, A., …Ensslin, K. (2018). Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials, 5(3), Article 035040. https://doi.org/10.1088/2053-1583/aacb49

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c... Read More about Magnetotransport and lateral confinement in an InSe van der Waals heterostructure.

Improved performance of InSe field-effect transistors by channel encapsulation (2018)
Journal Article
Liang, G., Wang, Y., Han, L., Yang, Z.-X., Xin, Q., Kudrynskyi, Z. R., …Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), Article 06LT01. https://doi.org/10.1088/1361-6641/aab62b

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosp... Read More about Improved performance of InSe field-effect transistors by channel encapsulation.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures (2018)
Journal Article
Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., …Gorbachev, R. (2018). Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. Nano Letters, 18(6), 3950-3955. https://doi.org/10.1021/acs.nanolett.8b01376

© Copyright 2018 American Chemical Society. Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attr... Read More about Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. Physical Review Letters, 119(15), Article 157701. https://doi.org/10.1103/PhysRevLett.119.157701

© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall e... Read More about Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), Article 39619. https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

Highly-mismatched InAs/InSe heterojunction diodes (2016)
Journal Article
Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., …Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), Article 182115. https://doi.org/10.1063/1.4967381

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component... Read More about Highly-mismatched InAs/InSe heterojunction diodes.

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire (2016)
Journal Article
Beardsley, R., Akimov, A. V., Greener, J. D., Mudd, G. W., Sandeep, S., Kudrynskyi, Z. R., …Kent, A. J. (2016). Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire. Scientific Reports, 6, https://doi.org/10.1038/srep26970

Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable d... Read More about Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.