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Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures

Bhuiyan, Mahabub A.; Kudrynskyi, Zakhar R.; Mazumder, Debarati; Greener, Jake D.G.; Makarovsky, Oleg; Mellor, Christopher J.; Vdovin, Evgeny E.; Piot, Benjamin A.; Lobanova, Inna I.; Kovalyuk, Zakhar D.; Nazarova, Marina; Mischenko, Artem; Novoselov, Kostya S.; Cao, Yang; Eaves, Laurence; Yusa, Go; Patanè, Amalia

Authors

Mahabub A. Bhuiyan

Zakhar R. Kudrynskyi

Debarati Mazumder

Jake D.G. Greener

Oleg Makarovsky

Christopher J. Mellor

Evgeny E. Vdovin

Benjamin A. Piot

Inna I. Lobanova

Zakhar D. Kovalyuk Zakhar.Kudrynskyi@nottingham.ac.uk

Marina Nazarova

Artem Mischenko

Kostya S. Novoselov

Yang Cao

Laurence Eaves

Go Yusa

Amalia Patanè



Abstract

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post‐transition” metal chalcogenide InSe. Here we report on field effect phototransistors where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. We show that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. We probe the charge transfer at the InSe/graphene interface by Hall effect and photoconductivity measurements, and demonstrate that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.

Journal Article Type Article
Publication Date Jan 17, 2019
Journal Advanced Functional Materials
Print ISSN 1616-301X
Electronic ISSN 1616-3028
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 29
Issue 3
Article Number 1805491
APA6 Citation Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), https://doi.org/10.1002/adfm.201805491
DOI https://doi.org/10.1002/adfm.201805491
Publisher URL https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201805491

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