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Gate-defined quantum confinement in InSe-based van der Waals heterostructures

Hamer, Matthew James; Tovari, Endre; Zhu, Mengjian; Thompson, Michael; Mayorov, Alexander; Prance, Jonathon; Lee, Yongjin; Haley, Richard P.; Kudrynskyi, Zakhar R.; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D.; Ensslin, Klaus; Kretinin, Andrey V.; Geim, Andre; Gorbachev, R.V.

Authors

Matthew James Hamer

Endre Tovari

Mengjian Zhu

Michael Thompson

Alexander Mayorov

Jonathon Prance

Yongjin Lee

Richard P. Haley

Zakhar R. Kudrynskyi

Amalia Patanè

Daniel Terry

Zakhar D. Kovalyuk

Klaus Ensslin

Andrey V. Kretinin

Andre Geim

R.V. Gorbachev



Abstract

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Journal Article Type Article
Publication Date Jun 13, 2018
Journal Nano Letters
Print ISSN 1530-6984
Electronic ISSN 1530-6992
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 18
Issue 6
Pages 3950–3955
APA6 Citation Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., …Gorbachev, R. (2018). Gate-defined quantum confinement in InSe-based van der Waals heterostructures. Nano Letters, 18(6), 3950–3955. https://doi.org/10.1021/acs.nanolett.8b01376
DOI https://doi.org/10.1021/acs.nanolett.8b01376
Keywords Two-Dimensional Materials, Quantum Dots, Quantum Point Contacts, Charge Quantization, Indium Selenide, Electronic Devices
Publisher URL https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b01376
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2018 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/do...21/acs.nanolett.8b01376

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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