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Improved performance of InSe field-effect transistors by channel encapsulation

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

Authors

Guangda Liang

Yiming Wang

Lin Han

Zai-xing Yang

Qian Xin

Zakhar R. Kudrynskyi

Zakhar D. Kovalyuk

Amalia Patanè

Aimin Song



Abstract

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly (methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

Journal Article Type Article
Publication Date May 17, 2018
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 33
Issue 6
Article Number 06LT01
APA6 Citation Liang, G., Wang, Y., Han, L., Yang, Z., Xin, Q., Kudrynskyi, Z. R., …Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), doi:10.1088/1361-6641/aab62b
DOI https://doi.org/10.1088/1361-6641/aab62b
Publisher URL http://iopscience.iop.org/article/10.1088/1361-6641/aab62b/meta
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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