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Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks (2016)
Journal Article
Reichlová, H., Novák, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., …Jungwirth, T. (2016). Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. Materials Research Express, 3, Article 076406. https://doi.org/10.1088/2053-1591/3/7/076406

Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling an... Read More about Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks.

High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques (2016)
Journal Article
Gomonay, O., Jungwirth, T., & Sinova, J. (2016). High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques. Physical Review Letters, 117(1), Article 017202. https://doi.org/10.1103/PhysRevLett.117.017202

We demonstrate the possibility to drive an antiferromagnetic domain wall at high velocities by fieldlike Néel spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sublattice of the antiferr... Read More about High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques.

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe (2016)
Journal Article
Kriegner, D., Výborný, K., Olejnik, K., Reichlová, H., Novák, V., Marti, X., …Jungwirth, T. (in press). Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nature Communications, 7(11623), https://doi.org/10.1038/ncomms11623

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memo... Read More about Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

Room-temperature spin-orbit torque in NiMnSb (2016)
Journal Article
Ciccarelli, C., Anderson, L., Tshitoyan, V., Ferguson, A., Gerhard, F., Gould, C., …Jungwirth, T. (in press). Room-temperature spin-orbit torque in NiMnSb. Nature Physics, 12, https://doi.org/10.1038/nphys3772

Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, the two atomic sites in the unit cell of these crystals form inversion partners which gives... Read More about Room-temperature spin-orbit torque in NiMnSb.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.

Antiferromagnetic structure in tetragonal CuMnAs thin films (2015)
Journal Article
Wadley, P., Hills, V. A., Shahedkhah, M. R., Edmonds, K. W., Campion, R. P., Novák, V., …Jungwirth, T. (2015). Antiferromagnetic structure in tetragonal CuMnAs thin films. Scientific Reports, 5(1), Article 17079. https://doi.org/10.1038/srep17079

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetrag... Read More about Antiferromagnetic structure in tetragonal CuMnAs thin films.

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets (2014)
Journal Article
Železný, J., Gao, H., Výborný, K., Zemen, J., Mašek, J., Manchon, A., …Jungwirth, T. (2014). Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets. Physical Review Letters, 113(15), Article 157201. https://doi.org/10.1103/PhysRevLett.113.157201

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic t... Read More about Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets.

Anisotropic magnetoresistance in an antiferromagnetic semiconductor (2014)
Journal Article
Fina, I., Marti, X., Yi, D., Liu, J., Chu, J. H., Rayan-Serrao, C., …Ramesh, R. (2014). Anisotropic magnetoresistance in an antiferromagnetic semiconductor. Nature Communications, 5, Article 4671. https://doi.org/10.1038/ncomms5671

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental obs... Read More about Anisotropic magnetoresistance in an antiferromagnetic semiconductor.