Outputs (17)

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy (2024)
Journal Article
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5, Article 189. https://doi.org/10.1038/s43246-024-00633-x

High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performan... Read More about High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing (2024)
Journal Article
Cottam, N. D., Dewes, B. T., Shiffa, M., Cheng, T. S., Novikov, S. V., Mellor, C. J., Makarovsky, O., Gonzalez, D., Ben, T., & Patanè, A. (2024). Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing. ACS Applied Nano Materials, 7(15), 17553-17560. https://doi.org/10.1021/acsanm.4c02685

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates pr... Read More about Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride (2024)
Journal Article
Shima, K., Cheng, T. S., Mellor, C. J., Beton, P. H., Elias, C., Valvin, P., …Chichibu, S. F. (2024). Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports, 14(1), Article 169. https://doi.org/10.1038/s41598-023-50502-9

Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple light scatte... Read More about Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article
Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., …Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/physrevx.12.011057

The light-matter interaction in bulk semiconductors is in the strong coupling regime with hybrid eigenstates, the so-called exciton-polaritons and phonon-polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/PhysRevX.12.011057

The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Journal Article
Román, R. J. P., Costa, F. J. R., Zobelli, A., Elias, C., Valvin, P., Cassabois, G., …Zagonel, L. F. (2021). Band gap measurements of monolayer h-BN and insights into carbon-related point defects. 2D Materials, 8(4), Article 044001. https://doi.org/10.1088/2053-1583/ac0d9c

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature si... Read More about Band gap measurements of monolayer h-BN and insights into carbon-related point defects.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., …Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.