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Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies (2018)
Journal Article
Whale, J., Akimov, A. V., Novikov, S. V., Mellor, C. J., & Kent, A. J. (2018). Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies. Physical Review Materials, 2(3), https://doi.org/10.1103/PhysRevMaterials.2.034606

Picosecond ultrasonics was used to study the photoelastic properties of zinc-blende (cubic) c-AlₓGa₁₋ₓN with x around 0.5 The velocities for longitudinal sound in the alloys were measured using ultrafast UV pump-probe experiments with (Al... Read More about Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies.

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN (2017)
Journal Article
Novikov, S. V., Kent, A., & Foxon, C. (2017). Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN. Progress in Crystal Growth and Characterization of Materials, 63(2), https://doi.org/10.1016/j.pcrysgrow.2017.04.001

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured... Read More about Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN.

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017)
Journal Article
Novikov, S. V., & Foxon, C. (2017). Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477, 154-158. https://doi.org/10.1016/j.jcrysgro.2017.01.007

Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron... Read More about Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources.

Intermixing studies in GaN_1−xSb_x highly mismatched alloys (2016)
Journal Article
Sarney, W. L., Svensson, S. P., Ting, M., Segercrantz, N., Walukiewicz, W., Yu, K. M., …Foxon, C. T. (2017). Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56(3), B64-B69. https://doi.org/10.1364/AO.56.000B64

GaN1−xSbx with x~ 5-7% is a highly mismatched alloy predicted to have favorable properties for application as an electrode in a photo-electrochemical cell for solar water splitting. In this study, we grew GaN1−xSbx under conditions intended to induce... Read More about Intermixing studies in GaN_1−xSb_x highly mismatched alloys.

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C. R., Sahonta, S.-L., Oliver, R., Humphreys, C., & Foxon, C. (in press). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, https://doi.org/10.1016/j.jcrysgro.2016.07.038

The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we... Read More about Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes (2016)
Journal Article
Gohil, T., Whale, J., Lioliou, G., Novikov, S. V., Foxon, C., Kent, A., & Barnett, A. (2016). X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6, Article 29535. https://doi.org/10.1038/srep29535

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in c... Read More about X-ray detection with zinc-blende (cubic) GaN Schottky diodes.

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties (2016)
Journal Article
Yu, K., Sarney, W., Novikov, S. V., Segercrantz, N., Ting, M., Shaw, M., …Foxon, C. (2016). Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31(8), https://doi.org/10.1088/0268-1242/31/8/083001

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme... Read More about Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties.

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes (2016)
Journal Article
Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zhang, S., …Houston, P. (2016). Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31(6), https://doi.org/10.1088/0268-1242/31/6/065020

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×... Read More about Characterization of p-GaN1−xAsx/n-GaN PN junction diodes.

Surface acoustic wave velocity and elastic constants of cubic GaN (2016)
Journal Article
Riobóo, R. J. J., Cuscó, R., Prieto, C., Kopittke, C., Novikov, S. V., & Artús, L. (2016). Surface acoustic wave velocity and elastic constants of cubic GaN. Applied Physics Express, 9(6), Article 061001. https://doi.org/10.7567/APEX.9.061001

We present high-resolution surface Brillouin scattering measurements on cubic GaN layers grown on GaAs substrate. By using a suitable scattering geometry, scattering by surface acoustic waves is recorded for different azimuthal angles, and the surfac... Read More about Surface acoustic wave velocity and elastic constants of cubic GaN.