Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays
(2021)
Journal Article
Jaafar, A. H., Meng, L., Noori, Y. J., Zhang, W., Han, Y., Beanland, R., …Bartlett, P. N. (2021). Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays. Journal of Physical Chemistry C, 125(47), 26247-26255. https://doi.org/10.1021/acs.jpcc.1c08549
In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching ch... Read More about Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays.